- +8618437960706
- دوشنبه تا شنبه: 10:00 - 16:00 / یکشنبه تعطیل است
High-density packaging of high-voltage semiconductors, such as 10 kV SiC MOSFETs, has the added challenge of maintaining low electric field concentration in order to prevent …
به خواندن ادامه دهیدn-type SiC IGBT with 10kV SiC MOSFET and 6.5kV Si IGBT based on 3L-NPC VSC applications Sachin Madhusoodhan an Kamalesh Hatua, Subhashish Bhattacharya, Scott Leslie, Sei- ... kV SiC IGBTs and 10 kV SiC MOSFETs based multilevel converters Sachin Madhusoodhan an Awneesh Tripathi, Dhaval Patel, Krishna Mainali, Arun Kadavelugu, …
به خواندن ادامه دهیدA Si IGBT and a series connection of two 1.7 kV / 325 A SiC MOSFETs from a third party in a 4.16 kV modular multi-level converter revealed significant benefits of the 3.3-kV SiC MOSFETs. In general, the 3.3-kV SiC MOSFETs reduced losses and enabled a smaller installed semiconductor die area, improving the power
به خواندن ادامه دهیدOur Silicon Carbide MOSFETs replace silicon devices to enable lower switching and conduction losses with higher blocking voltages and avalanche capability. We established a new benchmark for energy …
به خواندن ادامه دهید10 kV SiC MOSFETs are promising to substantially boost the performance of future medium voltage (MV) converters, ranging from MV motor drives to fast charging stations for electric vehicles (EVs). Numerous factors influence the switching performance of 10 kV SiC MOSFETs with much faster switching speed than their Si counterparts.
به خواندن ادامه دهیدHigh-density packaging of high-voltage semiconductors, such as 10 kV silicon-carbide (SiC) metal-oxide semiconductor field-effect transistor (MOSFETs), has the added challenge of maintaining low electric field …
به خواندن ادامه دهیدIn this paper, we report our recently developed 10 kV/20 A SiC MOSFETs with a chip size of 8.1 × 8.1 mm 2 and a specific on-resistance (R ON, SP ) of 100 MΩ-cm 2 at 25 °C. We …
به خواندن ادامه دهیدThe implementation of a novel bidirectional medium voltage AC-DC converter based on 10kV SiC MOSFET is presented in this paper. The improved topology allows the removal of the reverse blocking silicon diode in medium voltage SiC MOSFET module. Shoot-through problems and avalanche of the integrated silicon diode in traditional medium voltage …
به خواندن ادامه دهید500 kW SiC Mosfet based drive For the same 4.16 kV, 500 kW drive system, using 10 kV/120A SiC-Mosfet, it is possible to have a 2-level topology. The SiC devices can be switched at 5 kHz, for 69A rms (98A peak) current, and a single device can withstand the forward blocking voltage of Vdc = 6kV. SiC MOSFET kV rating? 10kV, 12kV, 15kV
به خواندن ادامه دهیدOUTLINE. 3. Cree/Wolfspeed Gen 3 MOSFETs. Specific RDSON of 900V-1700V MOSFETs. Rel data for smaller (65mOhm) 900V MOSFETs. 900V, 10mOhm SiC …
به خواندن ادامه دهید16 16 18 20 8.1 mm • Very Small Difference in On-Resistance (RDS,on) at 150 C • Enhanced Short Circuit 10 kV SiC MOSFET has Higher Threshold Voltage Measured I-V Characteristics at 150 C of Enhanced Short Circuit Capability and Baseline Gen3 10 kV/350 mOhm SiC MOSFETs 16 18 20 Enhanced Short Circuit Gen3
به خواندن ادامه دهیدDriver IC UCC27531 is used [11] to accomplish the switching of a 10kV SiC MOSFET with DESAT protection. A current-source gate driver [12] is used to drive SiC MOSFETs using UDUM4120 IC. ...
به خواندن ادامه دهیدVoltage 7kV / 400V 10kV / 340V 6kV / 400V Frequency 48kHz 37kHz 40kHz Switches HV SiC HV SiC HV SiC Density 3.8kW/dm3 1.5kW/dm3 n/a Efficiency 99.0% 97.3% 97.4% …
به خواندن ادامه دهیدParasiic capacitances of the SiC MOSFET Cas. Cav. and Cvs. diode and load inductor lumd parasic capacitance cdk· The two inputs e the supply voltage v and load current J. Here, the modeling of the SiC MOSFET ansients posed in [4] is adopted to desibe the -ON nd -O sients. A. MOSF Tu-ON Tsiet The in terminal of the MOSFET is osively biased,
به خواندن ادامه دهیدHigh-density packaging of fast-switching power semiconductors typically requires low thermal resistance and low parasitic inductance. High-density packaging of high voltage semiconductors, such as 10kV SiC MOSFETs, has brought additional challenge. This work proposes a wire-bond-less, highly integrated planar SiC half-bridge module, with …
به خواندن ادامه دهید1. I agree, it is quite complicated to get a good voltage distribution across all MOSFETs during turn-on and turn-off. Furthermore 10 kV is high voltage and one needs to be extremely careful with such voltage levels, which can be deadly. – Ken Grimes.
به خواندن ادامه دهیدBody diode of a 10kV, 10A 4H-SiC MOSFET and 10kV, 10A 4H-SiC JBS diode, shown in Fig. 4, are subjected to the double pulse test to measure the diode switching loss.
به خواندن ادامه دهیدa SiC diode were able to obtain a breakdown voltage of about 20 kV, which is almost equivalent to that of a high-pressure Si stack. The breakdown voltage of SiC MOSFETs is about 10 kV, whereas it is 1 kV for the Si MOSFETs. Moreover, the complexity, as well as the size of SiC devices, can be reduced drastically compared to …
به خواندن ادامه دهیدSiC devices is utilized for high frequency switching, reaches 98.6% at its peak value, proposing that SiC MOSFET's lower switching losses compared with Si IGBT. IV. CONLUSIONS This paper discussed the switching transient and switching loss of the 1200V 100A SiC MOSFET, compared it with the same rating silicon IGBT, the results
به خواندن ادامه دهیدPhase II is developing 100 A, 10 kV SiC power modules – Phase III goal is 13.8 kV 2.7 MVA Solid State Power Substation • Circuit simulation used to – Optimize SiC module and system – Evaluate impact of new technology on grid power converters • SECA goal of $40-$100 / kW for the fuel cell plant – High-Voltage grid-connected inverter ...
به خواندن ادامه دهیدSiC MOSFETs capable of blocking extremely high voltages (up to 15kV); while dopant control for thin highly-doped epitaxial layers has helped enable low on-resistance 900V SiC MOSFET production. Device design and processing improvements have resulted in lower MOSFET specific on-resistance for each successive device generation.
به خواندن ادامه دهیدHesam Mirzaee,Ankan De, Awneesh Tripathi, Subhashish Bhattacharya," Design comparison of high power medium-voltage converters based on 6.5kV Si-IGBT/Si-PiN diode, 6.5kV Si-IGBT/SiC-JBS diode, and 10kV SiC MOSFET/SiC-JBS diode ",IEEE Energy Conversion Congress and Exposition,2011
به خواندن ادامه دهیدFig. 1: Three phase converter enabled by 10kV SiC MOSFETs to be designed to ensure safe operation during switching. The high di/dt introduces voltage surge on the device during
به خواندن ادامه دهیدMOSFETs in the 6.5KV-10KV range are now emerging as module-based products. It has been amply demonstrated that SiC MOSFETs offer dramatic loss reductions relative to silicon IGBTs above …
به خواندن ادامه دهیدThis article presents the design and testing of a 10-kV SiC mosfet power module that switches at a record 250 V/ns without compromising the signal and ground …
به خواندن ادامه دهید10kV, 10A SiC MOSFET DC bus capacitor bank Inductor (6.9mH) (b) Fig. 4: Photograph of (a) 10kV, 10A 4H-SiC MOSFET die in a package without isolated base plate, and (b) the UIS test hardware setup. IV. EXPERIMENTAL RESULTS Fig. 4(a) shows the photograph of the 10kV SiC MOSFET. Its package does not have isolated base plate,
به خواندن ادامه دهیدSiC MOSFET Module Christina DiMarino1, Mark Johnson 2, Bassem Mouawad2, Jianfeng Li2, Dushan Boroyevich1, Rolando Burgos1, Guo-Quan Lu1, Meiyu Wang1, 1Center for Power Electronics Systems
به خواندن ادامه دهیدPalmer, J., Ji, S. Q., Huang, X. X., Zhang, L., Giewont, W., Wang, F. F., Tolbert, L. M. (2019). Testing and validation of 10 kV SiC MOSFET based 35 kVA MMC …
به خواندن ادامه دهیدIn the current paper, we propose a complete sizing of the power supply and we justify the choice of each component, notably the 10kV SiC MOSFETs and diodes, as presented in Section 3. The experimental setup, performance analysis, notably through a power balance, and results are discussed in Section 3 and Section 4 .
به خواندن ادامه دهیدThis new class of 10kV SiC die is targeted for several new applications, including solid state transformers utilizing a 7.2kV or 4.16kV line-voltage. For the first …
به خواندن ادامه دهیدMunk-Nielsen, "Reduction of parasitic capacitance in 10 kV SiC MOSFET power modules using 3D FEM," 2017 19th European Confer ence on Power Electr onics and Applications (EPE'17 ECCE Europe), W ...
به خواندن ادامه دهیدThe total module footprint is 35.2 mm × 74.3 mm × 11.4 mm without the housing, giving a power density of 18.1 W/mm 3. For reference, the power density of Wolfspeed s 10 kV, 240 A SiC MOSFET module is 4.2 W/mm 3, including the housing. According to ANSYS Q3D Extractor, the gate-loop inductance for each MOSFET die is 3.8 nH.
به خواندن ادامه دهید• HV SiC devices –10kV MOSFET, 15kV MOSFET, 15kV IGBT, 6.5kV JFET, 3.3kV - 5kV MOSFET • What MV Power Conversion applications are enabled • Grid integration of …
به خواندن ادامه دهیدFigure 3 Gate-source threshold voltage range of SiC MOSFET The minimum gate-source threshold voltage V gs(th) of other SiC MOSFET devices can be lower than 2 V at 25°C in some cases. Therefore, minor ground bouncing can lead to an uncontrolled turn-on of the MOSFET when using an off-state voltage of zero Volts.
به خواندن ادامه دهیدThe aim of this paper is to obtain the key device characteristics of SiC MOSFETs so that their realistic application prospect can be provided. In particular, the …
به خواندن ادامه دهیدHigh voltage high power semiconductor devices are being used for grid integration of renewable energy sources. 1200V, 100A SiC Mosfets, 10 kV SiC Mosfets and 10kV SiC JBS Diodes have proven to be ...
به خواندن ادامه دهید