Silicon Carbide (SiC) MOSFET, M1, TO-247-4L 1700 V, 28 mOhm, NTH4L028N170M1 Datasheet, NTH4L028N170M1 circuit, NTH4L028N170M1 data sheet : ONSEMI, alldatasheet, Datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs and other semiconductors.
به خواندن ادامه دهیدNTH4L028N170M1. 1700 V 81A 535W N-Channel Through Hole Silicon Carbide MOSFET-TO-247-4L. NTH4L028N170M1 Datasheet. ECAD Model: Convert this file for your ECAD tool by downloading the free Library Loader. Learn more about ECAD model. Mfr. Name: onsemi: Standard Pkg: Product Variant Information section.
به خواندن ادامه دهیدNTH4L028N170M1 onsemi MOSFET SIC 1700V MOS 28MO IN TO247-4L datasheet, inventory & pricing.
به خواندن ادامه دهیدبه روزرسانی ۲۲ خرداد ۱۴۰۲ : لیست قیمت جدید محصولات ایران خودرو برای اجرا از اول تیرماه ۱۴۰۲ از سوی این شرکت منتشر گردید. لیست درج شده قیمت بهای کارخانه است و به آن مبالغ مالیات، بیمه، شماره ...
به خواندن ادامه دهیدMosfet, N-Ch, 1.7Kv, 81A, To-247, Mosfet Module Configuration:Single, Channel Type:N Channel, Continuous Drain Current Id:81A, Drain Source Voltage Vds:1.7Kv, No. Of …
به خواندن ادامه دهیدNTH4L028N170M1/D Silicon Carbide (SiC) MOSFET – EliteSiC, 28mohm, 1700V, M1, TO-247-4L NTH4L028N170M1 Features • Typ. RDS(on) = 28 m @ VGS = 20 V • Ultra Low …
به خواندن ادامه دهیدNTH4L028N170M1 1700V EliteSiC MOSFET onsemi NTH4L028N170M1 1700V EliteSiC MOSFET provides reliable, high-efficiency performance for energy infrastructure and industrial drive applications. The onsemi EliteSiC MOSFET features Planar technology that works reliably with negative gate voltage drives and turns off spikes on the gate. This …
به خواندن ادامه دهید14,(SiC)"EliteSiC",(CES),EliteSiC1700V EliteSiC MOSFET。1700V EliteSiC MOSFET(NTH4L028N170M1),(BV)SiC。
به خواندن ادامه دهیدNTH4L028N170M1. 1 cart items. Signal Conditioning & Control Custom & ASSP Interfaces Wireless Connectivity. Silicon Carbide (SiC) MOSFETs Power Modules Protected MOSFETs Rectifiers Audio Transistors Darlington Transistors ESD Protection Diodes JFETs Small Signal Switching Diodes Zener Diodes RF Transistors RF Diodes IGBTs.
به خواندن ادامه دهیدNTH4L028N170M1. 1 cart items. Signal Conditioning & Control Custom & ASSP Interfaces Wireless Connectivity. Silicon Carbide (SiC) MOSFETs Power Modules Protected …
به خواندن ادامه دهیدnth4l028n170m1 onsemi mosfet sic 1700v mos 28mo in to247-4l ใบข้อมูล สินค้าคงคลัง และราคา ข้ามไปยังเนื้อหาหลัก
به خواندن ادامه دهیدThe NTH4L028N170M1 from onsemi is a MOSFET with Continous Drain Current 57 A, Drain Source Resistance 40 milliohm, Drain Source Breakdown Voltage 1700 V, Gate Source Voltage -15 to 25 V, Gate Source Threshold Voltage 4.3 V. Tags: Through Hole. More details for NTH4L028N170M1 can be seen below.
به خواندن ادامه دهیدNTH4L028N170M1 onsemi MOSFET SIC 1700V MOS 28MO IN TO247-4L datasheet, inventory & pricing.
به خواندن ادامه دهیدThe onsemi NTH4L028N170M1 1700V EliteSiC MOSFET is housed in a TO247-4L package with a Kelvin source connection on the fourth pin that improves turn-on power dissipation …
به خواندن ادامه دهیدمیلگرد 8 آجدار A3 بافق یزد شاخه ۱۲ متری کارخانه. واحد فروش (كيلوگرم) معادل: 0,000 تن. حدود قیمت. 25,130 تومان. قیمت نهایی بعد از تماس و اعلام کارشناس مشخص میشود. انصراف. افزودن به سبد خرید. میلگرد ۸ ...
به خواندن ادامه دهیدDescription: MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 28 mohm, 1700 V, M1, TO-247-4L Lifecycle: New Product: New from this manufacturer. Datasheet: …
به خواندن ادامه دهیدNTH4L028N170M1 オンセミ onsemiの、チップワンストップ :C1S541902473083、・のサイト、チップワンストップはく・から・で、、ができるのオンラインショップ。、、、にトップメーカーのと ...
به خواندن ادامه دهیدonsemi NTH4L028N170M1 1700V EliteSiC MOSFET. Provides reliable, high-efficiency performance for energy and industrial drive applications. Learn More about onsemi NTH4L028N170M1 1700V EliteSiC MOSFET View Products related to onsemi NTH4L028N170M1 1700V EliteSiC MOSFET. onsemi D1 EliteSiC Diodes ...
به خواندن ادامه دهیدFind the best pricing for onsemi NTH4L028N170M1 by comparing bulk discounts per 1,000. Octopart is the world's source for onsemi NTH4L028N170M1 availability, pricing, and technical specs and other electronic parts
به خواندن ادامه دهیدNTH4L028N170M1 - onsemi. Video Transcript . onsemi NTH4L028N170M1 MOSFETs. Trans MOSFET N-CH SiC 1.7KV 81A 4-Pin(4+Tab) TO-247 Tube. Download Datasheet. Symbols and Footprints. Buy Options Information. Silicon Carbide (SiC) MOSFET - EliteSiC, 28 mohm, 1700 V, M1, TO-247-4L. EU RoHS: Compliant with Exemption : ECCN (US) …
به خواندن ادامه دهیدNTH4L028N170M1 onsemi MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 28 mohm, 1700 V, M1, TO-247-4L katalogový list, zásoby a ceny. Přeskočit na Hlavní obsah +420 517070880. Kontaktovat Mouser (Brno) +420 517070880 | Podněty. Změnit místo. Čeština. English; CZK. Kč CZK € EUR $ USD Česká Republika.
به خواندن ادامه دهیدبه روزرسانی ۲ مرداد ۱۴۰۲: لیست قیمت جدید کارخانه ای محصولات سایپا با احتساب کلیه هزینه های جانبی ویژه مردادماه ۱۴۰۲ منتشر شد. نام محصول. قیمت (ریال) ساینا S تیپ DA. ۲,۴۸۶,۹۴۰,۰۰۰. ساینا S دوگانه. ۲ ...
به خواندن ادامه دهیدNTH4L028N170M1/D Silicon Carbide (SiC) MOSFET – EliteSiC, 28mohm, 1700V, M1, TO-247-4L NTH4L028N170M1 Features • Typ. RDS(on) = 28 m @ VGS = 20 V • Ultra Low Gate Charge (QG(tot) = 200 nC) • High Speed Switching with Low Capacitance (Coss = 200 pF) • 100% Avalanche Tested • These Devices are Pb−Free and are RoHS Compliant …
به خواندن ادامه دهیدonsemi. Manufacturer Product Number. NTH4L028N170M1. Description. SIC MOSFET 1700 V 28 MOHM M1 SER. Manufacturer Standard Lead Time. 46 Weeks. Detailed …
به خواندن ادامه دهیدEliteSiC MOSFET 1700 V 28 mohm M1 series in TO247-4LD package
به خواندن ادامه دهیدProduct Details Part Number NTH4L028N170M1 Manufacturer onsemi Description 1700 V SiC MOSFET for UPS General Types of MOSFET N-Channel …
به خواندن ادامه دهیدNTH4L028N170M1 1700V EliteSiC MOSFET、。 EliteSiC MOSFET, …
به خواندن ادامه دهیدBuy onsemi NTH4L028N170M1 in Avnet APAC. View Substitutes & Alternatives along with datasheets, stock, pricing and search for other Silicon Carbide (SiC) MOSFETs & Modules products. Inactivity Warning Dialog. Close Modal. Your session is about to timeout due to inactivity. Click OK to extend your time for an additional 30 minutes.
به خواندن ادامه دهیدNTH4L028N170M1/D Silicon Carbide (SiC) MOSFET, M1, TO-247-4L 1700 V, 28 mOhm NTH4L028N170M1 Features • Typ. RDS(on) = 28 m @ VGS = 20 V • Ultra Low Gate Charge (QG(tot) = 200 nC) • High Speed Switching with Low Capacitance (Coss = 200 pF) • 100% Avalanche Tested • These Devices are Pb−Free and are RoHS Compliant Typical …
به خواندن ادامه دهیدNTH4L028N170M1/D Silicon Carbide (SiC) MOSFET, M1, TO-247-4L 1700 V, 28 mOhm NTH4L028N170M1 Features € Typ. RDS(on) = 28 m @ VGS = 20 V € Ultra Low Gate Charge (QG(tot) = 200 nC) € High Speed Switching with Low Capacitance (Coss = 200 pF) € 100% Avalanche Tested € These Devices are Pbï Free and are RoHS Compliant …
به خواندن ادامه دهیدProducts. Interfaces. High Performance Optocouplers. High Performance Transistor Optocouplers. High Speed Logic Gate Optocouplers. Low Voltage, High Performance Optocouplers. Specific Function Optocouplers.
به خواندن ادامه دهیدIt is a high-efficiency silicon carbide (SiC) MOSFET rated for 1700V. The NTH4L028N170M1 offers reliable, high-efficiency performance for energy infrastructure and industrial drive applications. It is optimized for fast-switching applications. The planar technology works reliably with negative gate voltage drives and turns off spikes on the gate.
به خواندن ادامه دهیدFarnell. MOSFET, N-CH, 1.7KV, 81A, TO-247; MOSFET Module Configuration:Single; Channel Type:N Channel; Continuous Drain Current Id:81A; Drain Source Voltage …
به خواندن ادامه دهید900 $29.5918. 450 $31.7055. Show All. Buy Now. NTH4L028N170M1 price and availability organized by top electronic component distributors and suppliers.
به خواندن ادامه دهیدNTH4L028N170M1 1700V EliteSiC MOSFET onsemi NTH4L028N170M1 1700V EliteSiC MOSFET provides reliable, high-efficiency performance for energy infrastructure and industrial drive applications. The onsemi EliteSiC MOSFET features Planar technology that works reliably with negative gate voltage drives and turns off spikes on the gate. This …
به خواندن ادامه دهیدBuy onsemi NTH4L028N170M1 in Avnet Americas. View Substitutes & Alternatives along with datasheets, stock, pricing and search for other Silicon Carbide (SiC) MOSFETs & Modules products.
به خواندن ادامه دهیدAt a test condition of 1200V at 40A, the 1700V EliteSiC MOSFET achieves a gate charge (Q g) of 200nC, compared to equivalent competitive devices that are closer to 300nC. A low Q g is critical to achieving high efficiency in fast switching, high-power renewable energy applications. The onsemi NTH4L028N170M1 1700V EliteSiC MOSFET is housed in a ...
به خواندن ادامه دهید