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به همین دلیل است که پشم سنگ به عنوان عایق کندسوز شناخته می‌شود. پشم سنگ علاوه بر عایق حرارتی، عایق صوتی نیز است و می‌توان آن را برای عایق‌کاری به خصوص در مکان‌های شلوغ، به کار برد. از ویژگی ...
به خواندن ادامه دهیدThe dual SiC MOSFET driver reference design is ideal for a wide range of end markets and applications, including aerospace (actuation, air conditioning, and power distribution), …
به خواندن ادامه دهیدSiC MOSFETs enable higher switching frequencies and greater device efficiency, allowing for reduced component size, higher blocking voltages and greater avalanche capability.
به خواندن ادامه دهیدMicrosemi / Microchip AgileSwitch® Phase Leg SiC (Silicon Carbide) MOSFET Power Modules are built with SiC MOSFETs and SiC Diodes, and therefore combine the advantages of both devices. These Power Modules feature an extremely low inductance SP6LI package, with a maximum stray inductance of 3nH.
به خواندن ادامه دهیدRoadPak SiC e-mobility modules: Link: Hitachi Power Semiconductors: Various IGBT, SiC modules: Contact [email protected] for support. Infineon: Various Power Devices: Link: Microchip (Microsemi) SiC MOSFETs, diodes: Link: onsemi: SiC MOSFETs, diodes, modules: Link (models available in EliteSiC) quorvo (UnitedSiC) SiC MOSFETs: Link …
به خواندن ادامه دهیدPower Cycling Test Failure Analysis of SiC MOSFET Devices MiJin Kima, Inho Kang b, JAE HWA SEO, Tae-eun Hongc, Jee-Hun Jeonga, Dahui Yooa and HO …
به خواندن ادامه دهیدIGBTs but can also be used to drive SiC MOSFETs. Fig. 8. Semikron SKHI 10/12 driver C. SiC devices The SiC MOSFET and SiC schottky diode chosen for characterization are IMW120R045M1 and the C4D15120D. The SiC MOSFET is first characterized with the body diode of another SiC MOSFET acting as the commutation partner. The
به خواندن ادامه دهیدSiC MOSFET Transistor X-Section • Simulation-based technology development to cut cycles of learning • Flexibility of design variations for special applications
به خواندن ادامه دهیدSic MOSFET front-end cost, wafer cost per process step, die probe test & dicing, die cost Packaging BOM & assembly cost Final test & component cost Cost Comparison • 1200V SiC MOSFETs –Cost Comparison between SiC Manufacturers Selling Price Analysis • Estimated Selling Price for 1200V-Gen3 (G3R75MT12D) and 3300V-Gen2 …
به خواندن ادامه دهیدALISO VIEJO, Calif., May 17, 2017 /PRNewswire/ -- Microsemi Corporation, a leading provider of semiconductor solutions differentiated by power, security, reliability and performance, and... | April 19, 2023
به خواندن ادامه دهیدهدایت حرارتی بسیار کم: این خصوصیت، کامپوزیت‌ها را برای استفاده به عنوان عایق حرارتی، مناسب می‌سازد مقاومت ویژه بالا و مدول ویژه بالا : این دو ویژگی، از برجسته‌ترین خصوصیات کامپوزیت‌ها ...
به خواندن ادامه دهیدMicrosemi / Microchip AgileSwitch® Phase Leg SiC (Silicon Carbide) MOSFET Power Modules are built with SiC MOSFETs and SiC Diodes, and therefore combine the advantages of both devices. These Power Modules feature an extremely low inductance SP6LI package, with a maximum stray inductance of 3nH. These SP6LI …
به خواندن ادامه دهیدMicrosemi and Analog Devices are collaborating on scalable SiC MOSFET driver solutions, starting with a new reference design.
به خواندن ادامه دهیدPower MOSFETs and Small-Signal MOSFETs. Power Switch ICs. Reverse Power Feed (RPF) Silicon Carbide (SiC) Devices. Silicon Carbide (SiC) Gate Drivers; Silicon Carbide (SiC) Die; Silicon Carbide (SiC) Discretes; Silicon Carbide (SiC) Modules; Transient Voltage Suppressors. Voltage Supervisors and References. Electromechanical Power Relays
به خواندن ادامه دهیدServices. Microsemi Corporation, a wholly owned subsidiary of Microchip Technology Inc. (Nasdaq: MCHP), offers a comprehensive portfolio of semiconductor and system solutions for communications, defense & security, aerospace and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits ...
به خواندن ادامه دهیدعایقهای حرارتی صنعتی که به آن‌ها عایق نسوز نیز می‌گویند، انواع مختلفی دارند. استفاده از این نوع عایق‌های صوتی و عایق نسوز، می‌تواند تا ۶۰ درصد از هزینه‌های اتلاف انرژی را صرفه‌جویی کند ...
به خواندن ادامه دهیدALISO VIEJO, Calif., May 17, 2017 /PRNewswire/ -- Microsemi Corporation (Nasdaq: MSCC), a leading provider of semiconductor solutions differentiat...
به خواندن ادامه دهیدعایق ساختمان ، عایق حرارتی برای آسایش و بهره وری انرژی به ساختمانها افزوده می شود. عایق کاری به معنای ایجاد سدی بین آب گرم و جسم سرد است که با بازتاب اشعه حرارتی یا کاهش هدایت حرارتی و همرفت از ...
به خواندن ادامه دهیدانواع عایق های حرارتی. پشم شیشه یکی از قدیمی ترین عایق های حرارتی است که در گذشته مورد استفاده قرار می گرفت و هم اکنون نیز استفاده از آن در برخی مکان ها رواج دارد. این عایق نوعی عایق معدنی است ...
به خواندن ادامه دهیدThe silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC040SMA120B4 device is a 1200 V, 40 mΩ SiC MOSFET in a TO-247 4-lead package with a source sense. 1.1 Features
به خواندن ادامه دهیدOwing to the superior properties of silicon carbide (SiC), such as higher breakdown voltage, higher thermal conductivity, higher operating frequency, higher …
به خواندن ادامه دهیدSimultaneously imposed challenges of high-voltage insulation, high dv/dt, high-switching frequency, fast protection, and thermal management associated with the …
به خواندن ادامه دهیدتابش. عایق حرارتی معمولاً برای محدود کردن انتقال حرارت از طریق رسانش استفاده می شود که در آن نیاز به تماس ...
به خواندن ادامه دهیدMicrosemi/Microchip SiC (실리콘 카바이드) MOSFET은 기존 실리콘 (Si) 전력 MOSFET보다 뛰어난 동적 및 열 성능을 제공합니다.이 MOSFET은 낮은 정전용량, 낮은 게이트 전하, 빠른 스위칭 속도, 우수한 애벌랜치 견고성이 특징입니다. SiC …
به خواندن ادامه دهید(4) T. Tanioka, et al.: High Performance 4H-SiC MOSFETs with Optimum Design of Active Cell and Re-Oxidation, PCIM Europe 2018, 879-884 (2018) (5) Peters, D., et al.: Investigation of threshold voltage stability of SiC MOSFETs, Proc. of 30th ISPSD, 40-43 (2018) Table 1 Comparison of SW characteristics in planar-gate MOS and MIT2-MOS
به خواندن ادامه دهیدMicrosemi Corporation, a leading provider of semiconductor solutions differentiated by power, security, reliability and performance, and Analog Devices, Inc., the leading global high-performance analog technology company, announced a scalable Silicon Carbide (SiC) driver reference design solution based on a range of Microsemi SiC …
به خواندن ادامه دهیدعایقهای حرارتی در بدنه هواپیمای بوینگ. عایق حرارتی موادی هستند که برای کم کردن تلفات حرارتی سطوح مختلف ساختمان، لوله‌ها، کانال‌ها و مخازن استفاده می‌شوند. [۱] با پیشرفت تکنولوژی و لزوم ...
به خواندن ادامه دهیدعایقبندی ساختمان به‌طور کلی به هر چیزی اطلاق می‌شود که برای عایق به هر منظوری استفاده شود. در حالی که بیشتر عایق‌ها در ساختمان به منظور حرارتی است، این عبارت به عایق صوتی و عایق آتش و عایق ...
به خواندن ادامه دهیدOwing to the superior properties of silicon carbide (SiC), such as higher breakdown voltage, higher thermal conductivity, higher operating frequency, higher operating temperature, and higher saturation drift velocity, SiC has attracted much attention from researchers and the industry for decades. With the advances in material science …
به خواندن ادامه دهیدMicrosemi and Analog Devices Collaborate on Scalable SiC MOSFET Driver Solutions to Accelerate Customer Designs and Time to Market Reference Design to be Showcased in Booth 6-318 at PCIM May 16-18
به خواندن ادامه دهیدMicrosemi SiC MOSFETs have a minimum threshold voltage of 1.7 V at 25 °C. The typical temperature coefficient of the threshold voltage is –6 mV/°C. Operation at an elevated junction temperature of 175 °C results in a threshold shift to roughly 1.7 V – (175–25) * 6 mV = 0.8 V. This threshold voltage is by
به خواندن ادامه دهیدfor customers using Microsemi SiC MOSFETs. The reference design also supports the transition to Microsemi's next-generation SiC MOSFETs. The new reference design provides customers with a highly isolated SiC MOSFET dual-gate driver switch as a means of evaluating SiC MOSFETs in a number of topologies. This includes modes optimized …
به خواندن ادامه دهیدPower Cycling Test Failure Analysis of SiC MOSFET Devices MiJin Kima, Inho Kang b, JAE HWA SEO, Tae-eun Hongc, Jee-Hun Jeonga, Dahui Yooa and HO-Jun LEEa* a Pusan National University, Busan, Republic of Korea b Korea Electrotechnology Research Institute (KERI), Changwon, Republic of Korea c Korea Basic Science Institute …
به خواندن ادامه دهیدPower MOSFETs and Small-Signal MOSFETs. Power Switch ICs. Reverse Power Feed (RPF) Silicon Carbide (SiC) Devices. Silicon Carbide (SiC) Gate Drivers; Silicon Carbide (SiC) Die; Silicon Carbide (SiC) Discretes; Silicon Carbide (SiC) Modules; Transient Voltage Suppressors. Voltage Supervisors and References. Electromechanical Power Relays
به خواندن ادامه دهیدThe reference design was developed for Microsemi SiC MOSFET discrete devices and modules and serves as an engineering tool for the evaluation of its portfolio of SiC devices. The board supports the modification of gate resistor values to accommodate most Microsemi discretes and modules.
به خواندن ادامه دهیدThe latest generation of high power MOSFETs have been designed to deliver best-in-class performance, to improve efficiency, and to optimize thermal performance and EMI behavior. As the world's leading MOSFET manufacturer and supplier, Infineon offers superior quality metal-oxide-silicon transistors to suit a variety of needs.
به خواندن ادامه دهیدA general review of the critical processing steps for manufacturing SiC MOSFETs, types of SiC MOSFETs, and power applications based on SiC power devices are covered in this paper. Additionally ...
به خواندن ادامه دهیدMicrochip's SiC Schottky Barrier Diodes (SBDs) are designed with balanced surge current, forward voltage, thermal resistance and thermal capacitance ratings at low reverse …
به خواندن ادامه دهید